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ihw30n100t soft switching series q power semiconductors 1 rev. 2.7 nov 08 low loss duopack : igbt in trenchstop and fieldstop technology with anti-parallel diode features: ? 1.1v forward voltage of antiparallel rectifier diode ? specified for t jmax = 175c ? trenchstop and fieldstop technology for 1000 v applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in v ce(sat) ? low emi ? qualified according to jedec 1 for target applications ? application specific optimisation of inverse diode ? pb-free lead plating; rohs compliant applications: ? microwave oven ? soft switching applications type v ce i c v ce(sat ),tj=25c t j,max marking package ihw30n100t 1000v 30a 1.55v 175 c H30T100 pg-to-247-3 maximum ratings parameter symbol value unit collector-emitter voltage v ce 1000 v dc collector current t c = 25 c t c = 100 c i c 60 30 pulsed collector current, t p limited by t jmax i cpuls 90 turn off safe operating area v ce 1000v, t j 175 c - 90 diode forward current t c = 25 c t c = 100 c i f 22 12 diode pulsed current, t p limited by t jmax i fpuls 36 a gate-emitter voltage transient gate-emitter voltage ( t p < 5 ms) v ge 20 25 v power dissipation, t c = 25 c p tot 412 w operating junction temperature t j -40...+175 c storage temperature t stg -55...+175 soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 c 1 j-std-020 and jesd-022 g c e pg-to-247-3 ? ? free datasheet http://www.ndatasheet.com
ihw30n100t soft switching series q power semiconductors 2 rev. 2.7 nov 08 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 0.36 diode thermal resistance, junction ? case r thjcd 1.1 thermal resistance, junction ? ambient r thja 40 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =500 a 1000 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =30a t j =25 c t j =150 c t j =175 c 1.3 - - 1.55 1.7 1.8 1.7 - - diode forward voltage v f v ge =0v, i f =10a t j =25 c t j =150 c t j =175 c - - - 1.1 1.0 1.0 1.3 - - gate-emitter threshold voltage v ge(th) i c =700 a, v ce = v ge 5.1 5.8 6.4 v zero gate voltage collector current i ces v ce =1000v , v ge =0v t j =25 c t j =175 c - - - - 5 2500 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 600 na transconductance g fs v ce =20v, i c =30a - 28 - s dynamic characteristic input capacitance c iss - 3573 - output capacitance c oss - 98 - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 76 - pf gate charge q gate v cc =800v, i c =30a v ge =15v - 217 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13 - nh free datasheet http://www.ndatasheet.com
ihw30n100t soft switching series q power semiconductors 3 rev. 2.7 nov 08 switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 35 - rise time t r - 22 - turn-off delay time t d(off) - 546 - fall time t f - 27 42 ns turn-on energy e on - - - turn-off energy e off - 1.6 2.6 total switching energy e ts t j =25 c, v cc =600v, i c =30a, v ge =0/15v, r g =15 , energy losses include ?tail? and diode reverse recovery. - - - mj switching characteristic, inductive load, at t j =175 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 33 - rise time t r - 36 - turn-off delay time t d(off) - 623 - fall time t f - 37 70 ns turn-on energy e on - - - turn-off energy e off - 2.3 4 total switching energy e ts t j =175 c v cc =600v, i c =30a, v ge =0/15v, r g = 15 energy losses include ?tail? and diode reverse recovery. - - - mj free datasheet http://www.ndatasheet.com
ihw30n100t soft switching series q power semiconductors 4 rev. 2.7 nov 08 i c , collector current 100hz 1khz 10khz 100khz 0a 10a 20a 30a 40a 50a 60a 70a 80a 90a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a 100s 20s 500s dc t p =1s 50s 10ms f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency for triangular current ( e on = 0, hard turn-off) ( t j 175 c, d = 0.5, v ce = 400v, v ge = 0/+15v, r g = 26.9 ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 175 c; v ge =15v) p tot , power dissipation 25c 50c 75c 100c 125c 150c 0w 50w 100w 150w 200w 250w 300w 350w 400w i c , collector current 25c 75c 125c 0a 10a 20a 30a 40a 50a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 175 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 175 c) i c free datasheet http://www.ndatasheet.com
ihw30n100t soft switching series q power semiconductors 5 rev. 2.7 nov 08 i c , collector current 0v 1v 2v 3v 0a 20a 40a 60a 80a 100a 15v 7v 9v 11v 13v v ge =20v i c , collector current 0v 1v 2v 3v 0a 20a 40a 60a 80a 100a 15v 13v 7v 9v 11v v ge =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristic ( t j = 25c) figure 6. typical output characteristic ( t j = 175c) i c , collector current 0v 2v 4v 6v 8v 10v 0a 20a 40a 60a 80a 100a 25c t j =175c v ce(sat), collector - emitter saturation voltage -50c 0c 50c 100c 150c 0.0v 0.5v 1.0v 1.5v 2.0v 2.5v i c =40a i c =80a i c =20a v ge , gate-emitter voltage t j , junction temperature figure 7. typical transfer characteristic (v ce =20v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v) free datasheet http://www.ndatasheet.com
ihw30n100t soft switching series q power semiconductors 6 rev. 2.7 nov 08 t, switching times 0a 10a 20a 30a 40a 50a 100ns 1000ns t f t d(off) t, switching times 20 30 40 10ns 100ns 1000ns t f t d(off) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j =175c, v ce = 600v, v ge = 0/15v, r g =26.9 ? , dynamic test circuit in figure e) figure 10. typical switching times as a function of gate resistor (inductive load, t j = 175c, v ce = 600v, v ge = 0/15v, i c = 30a, dynamic test circuit in figure e) t, switching times 25c 50c 75c 100c 125c 150c 100ns 1000ns t f t d(off) v ge(th ) , gate - emitter threshold voltage -50c 0c 50c 100c 2v 3v 4v 5v 6v max. typ. min. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce = 600v, v ge = 0/15v, i c = 30a, r g =26.9 ? , dynamic test circuit in figure e) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.7ma) free datasheet http://www.ndatasheet.com
ihw30n100t soft switching series q power semiconductors 7 rev. 2.7 nov 08 e , switching energy losses 0a 10a 20a 30a 40a 50a 0.0mj 1.0mj 2.0mj 3.0mj 4.0mj 5.0mj e off e , switching energy losses 20 30 40 0.0mj 1.0mj 2.0mj 3.0mj e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 175c, v ce = 600v, v ge = 0/15v, r g =26.9 ? , dynamic test circuit in figure e) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j = 175c, v ce = 600v, v ge = 0/15v, i c = 30a, dynamic test circuit in figure e) e , switching energy losses 25c 50c 75c 100c 125c 150c 0.0mj 0.5mj 1.0mj 1.5mj 2.0mj 2.5mj e off e , switching energy losses 400v 500v 600v 700v 0.0mj 0.5mj 1.0mj 1.5mj 2.0mj 2.5mj 3.0mj e off t j , junction temperature v ce , collector - emitter voltage figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce = 600v, v ge = 0/15v, i c = 30a, r g = 26.9 ? , dynamic test circuit in figure e) figure 16. typical switching energy losses as a function of collector emitter voltage (inductive load, t j = 175c, v ge = 0/15v, i c = 30a, r g = 26.9 ? , dynamic test circuit in figure e) free datasheet http://www.ndatasheet.com
ihw30n100t soft switching series q power semiconductors 8 rev. 2.7 nov 08 v ge , gate - emitter voltage 0nc 50nc 100nc 150nc 200nc 250nc 0v 5v 10v 800v 200v c, capacitance 0v 10v 20v 30v 40v 10pf 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c =30 a) figure 18. typical capacitance as a function of collector-emitter voltage ( v ge =0v, f = 1 mhz) z thjc , transient thermal resistance 1s 10s 100s 1ms 10ms 100ms 1 0 -2 k/w 1 0 -1 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 z thjc , transient thermal resistance 10 s 100 s 1ms 10ms 100ms 1 0 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 t p , pulse width t p , pulse width figure 19. igbt transient thermal resistance ( d = t p / t ) figure 20. diode transient thermal impedance as a function of pulse width ( d = t p / t ) r ,(k/w) , (s) 0.1586 7.03*10 -2 0.0987 6.76*10 -3 0.0807 6.53*10 -4 0.026 8.22*10 -5 c 1 = r 1 r 1 r 2 c 2 = r 2 c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 0.0715 9.45*10 -2 0.2222 2.55*10 -2 0.4265 3.6*10 -3 0.364 5.1*10 -4 0.0181 1.09*10 -4 free datasheet http://www.ndatasheet.com
ihw30n100t soft switching series q power semiconductors 9 rev. 2.7 nov 08 i f , forward current 0.0v 0.5v 1.0v 1.5v 0a 10a 20a 30a 175c t j =25c v f , forward voltage -50c 0c 50c 100c 150c 0.0v 0.5v 1.0v 10a 3a i f =20a v f , forward voltage t j , junction temperature figure 21. typical diode forward current as a function of forward voltage figure 22. typical diode forward voltage as a function of junction temperature free datasheet http://www.ndatasheet.com
ihw30n100t soft switching series q power semiconductors 10 rev. 2.7 nov 08 5.44 0.55 6.04 5.49 1.68 3.68 4.17 20.82 16.25 15.70 1.05 3.50 19.80 13.10 3 min 1.90 4.90 2.27 1.07 1.85 1.90 0.238 0.216 0.066 0.145 0.164 0.075 0.820 0.640 0.618 0.022 0.193 0.089 0.042 0.073 0.041 0.075 0.138 0.780 0.516 0.68 6.30 6.00 17.65 2.60 5.10 14.15 3.70 21.10 16.03 20.31 1.35 4.47 2.41 5.16 2.53 1.33 2.11 max 2.16 0.027 0.214 3 0.248 0.236 0.695 0.557 0.102 0.201 0.831 0.631 0.053 0.146 0.799 0.176 min max 0.095 0.203 0.099 0.052 0.083 0.085 0 7.5mm 5 5 0 17-12-2007 03 z8b00003327 2.87 2.87 0.113 0.113 3.38 3.13 0.133 0.123 m m pg-to247-3 free datasheet http://www.ndatasheet.com
ihw30n100t soft switching series q power semiconductors 11 rev. 2.7 nov 08 figure a. definition of switching times i rrm 90% i rrm 10% i rrm di /dt f t rr i f i, v t q s q f t s t f v r di /dt rr q=q q rr s f + t=t t rr s f + figure c. definition of diodes switching characteristics p(t) 12 n t(t) j figure d. thermal equivalent circuit figure e. dynamic test circuit figure b. definition of switching losses free datasheet http://www.ndatasheet.com
ihw30n100t soft switching series q power semiconductors 12 rev. 2.7 nov 08 published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hint s given herein, any typical values stated herein and/or any information regarding the application of the devic e, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without lim itation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may co ntain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is re asonable to assume that the health of the user or other persons may be endangered. free datasheet http://www.ndatasheet.com

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